NaMLab

https://oiger.de/2026/09/03/chip-innovationen-aus-sachsen-sollen-kis-auf-trab-bringen/198399

Chip-Innovationen aus Sachsen sollen KIs auf Trab bringen - Oiger 20 Jahre Namlab: Ferroelektrische Speicher, KI-Chips, die sich selbst neu morphen und andere Innovationen aus Dresden die Mikroelektronik umkrempeln

Ferroelectric Polarization Enabled Threshold Voltage Modulation in High Electron Mobility Transistor

https://advanced.onlinelibrary.wiley.com/doi/10.1002/adfm.77470?utm_source=researchgate.net&utm_medium=article

Millisecond-Scale Relaxation in Metastable HZO Ferroelectric Capacitors for Bio-Inspired Temporal Computing

https://advanced.onlinelibrary.wiley.com/doi/10.1002/aelm.202500794

Congrats to Eric Fehrmann for winning the 2. Prize in the 2026 Emerging Talent Award of the "Friends of IHP" association!

Insights into the Application of NDR Nanodevices for Signal Amplification

https://www.taylorfrancis.com/chapters/edit/10.1201/9788743812791-13/insights-application-ndr-nanodevices-signal-amplification-alon-ascoli-gemo-rossetti-corinto-bonnin-gilli-civalleri-demirkol-messaris-prousalis-ntinas-slesazeck-mikolajick-tetzlaff-chua?context=ubx&refId=b8eda421-c60c-46d8-b335-9edbaa16110e

Three-Independent-Gate Reconfigurable Transistors in 22 nm FDSOI for in-Sensor Time-Domain Mixed-Signal Processing

https://ieeexplore.ieee.org/document/11562063

A Low-Power 2-bit Full Adder realized with Three-Independent-Gate Reconfigurable FETs

https://ieeexplore.ieee.org/document/11562307

Impact of field stress pattern on the performance of HfO2-based ferroelectric tunnel junctions

https://pubs.aip.org/aip/jap/article/139/22/224101/3394040/Impact-of-field-stress-pattern-on-the-performance

Achieving a Dielectric Constant of 60 in ZrxHf1−xO2:

A Candidate for DRAM?

https://ieeexplore.ieee.org/document/11532794

Congrats to Uwe and Eilam!

https://newsroom.intel.com/corporate/intels-2025-outstanding-researcher-awards-honor-10-academic-innovators

Uwe Schroeder / NamLab gGmbH & Eilam Yalon / Technion – Israel Institute of Technology

Understanding and controlling the growth and properties of ferroelectric HZO-based device stacks

Enhancing hafnia-based ferroelectric devices requires more profound understanding of fabrication processes, defect properties, and switching phenomena at the atomic dimension. This research center established complete insight into strain mechanics, defect formation, and electrode templating for preserving ferroelectric phases and directing polarization switching in GHz operating conditions. These breakthroughs boosted reliability by allowing optimized ferroelectric device configurations for varied high-frequency applications.

Intel’s 2025 Outstanding Researcher Awards Honor 10 Academic Innovators Recognizing breakthrough university research advancing the future of technology through deep academic collaboration.